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001 ocn234235529;

003 OCoLC;

005 20141212004652.0;

007 he bmb024bbca;

008 080718s1985 dcu b f000 0 eng d;

035 a| (Sirsi) o234235529;

035 a| (OCoLC)234235529;

040 a| GPOc| GPOd| UtOrBLW;

049 a| ERE$;

074 a| 0830-D (MF);

074 a| 0830-D (online);

086 0 a| NAS 1.15:77818;

100 1 a| Prost, W.?| UNAUTHORIZED;

245 10 a| Determination of the mobility profile in GaAs-MESFETs /c| W. Prost.;

260 a| Washington, DC :b| National Aeronautics and Space Administration,c| [1985];

300 a| 1 volume.;

336 a| text2| rdacontent;

337 a| microform2| rdamedia;

338 a| microfiche2| rdacarrier;

490 1 a| NASA technical memorandum ;v| NASA TM-77818;

650 0 a| Gallium arsenide semiconductors.=| ^A166782;

650 7 a| Charge carriers.2| nasat;

650 7 a| Field effect transistors.2| nasat;

650 7 a| Gallium arsenides.2| nasat;

650 7 a| Semiconductors (Materials)2| nasat;

710 1 a| United States.b| National Aeronautics and Space Administration.=| ^A5437;

830 0 a| NASA technical memorandumv| NASA TM-77818.=| ^A467613;

994 a| C0b| ERE;

596 a| 1;

998 a| 1393507;

999 a| NAS 1.15:77818w| SUDOCc| 1i| MQ2578504d| 8/12/2008l| JDOMIm| JOYNERr| Ys| Yt| JDOFMIu| 8/12/2008x| MICROFORMz| JFEDDOCSo| .STAFF. 0;

Determination of the mobility profile in GaAs-MESFETs / W. Prost.

Author/creator	Prost, W.
Other author	United States. National Aeronautics and Space Administration.
Format	Microform
Publication Info	Washington, DC : National Aeronautics and Space Administration, [1985]
Description	1 volume.
Subjects	Gallium arsenide semiconductors.

Series	NASA technical memorandum ; NASA TM-77818 NASA technical memorandum NASA TM-77818. ^A467613
Reproduction note	Joyner- Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 1985]. 1 microfiche.
GPO item number	0830-D (MF)
GPO item number	0830-D (online)
Govt. docs number	NAS 1.15:77818

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