Pendeo-epitaxy process optimization of GaN for novel devices applications / by Michael A. Derenge [and others].

Author/creator Derenge, Michael A.
Other author U.S. Army Research Laboratory.
Format Electronic
Publication InfoAdelphi, Md. : Army Research Laboratory, [2008]
Descriptioniv, 16 pages : digital, PDF file.
Supplemental Contenthttps://purl.fdlp.gov/GPO/LPS113050
Subjects

SeriesARL-TR ; 4426
ARL-TR (Aberdeen Proving Ground, Md.) ; 4426. ^A566074
General noteTitle from title screen (viewed on May 26, 2009).
General note"April 2008."
Technical detailsMode of access: Internet from the ARL web site. Address as of 5/26/09: http://www.arl.army.mil/arlreports/2008/ARL-TR-4426.pdf ; current access is available via PURL.
GPO item number0324-A-01 (online)
Govt. docs number D 101.133:4426