Growth of low defect density gallium nitride (GaN) films on novel tantalum carbide (TaC) substrates for improved device performance / M. A. Derenge [and others].

Author/creator Derenge, M. A.
Other author U.S. Army Research Laboratory.
Format Electronic
Publication InfoAdelphi, MD : Army Research Laboratory, [2009]
Descriptionvi, 26 pages : digital, PDF file.
Supplemental Contenthttps://purl.fdlp.gov/GPO/LPS114293
Subjects

SeriesARL-TR ; 4818
ARL-TR (Aberdeen Proving Ground, Md.) ; 4818. ^A566074
General noteTitle from title screen (viewed on July 6, 2009).
General note"May 2009."
Technical detailsMode of access: Internet from the ARL web site. Address as of 7/6/09: http://www.arl.army.mil/arlreports/2009/ARL-TR-4818.pdf ; current access is available via PURL.
GPO item number0324-A-01 (online)
Govt. docs number D 101.133:4818 D 101.33:4818

Availability

Library Location Call Number Status Item Actions
Electronic Resources Access Content Online ✔ Available