Tools

LEADER 03152nam 2200685Ia 4500

001 ocn227908507;

003 OCoLC;

005 20141212055234.0;

006 m d f ;

007 cr mn|||||||||;

008 080513s2006 mdua ot f000 0 eng d;

029 0 a| DTICEb| ADA458321;

035 a| (Sirsi) o227908507;

035 a| (OCoLC)227908507;

040 a| DTICEc| DTICEd| GPOd| UtOrBLW;

043 a| n-us---;

049 a| ERE#;

074 a| 0324-A-01 (online);

086 0 a| D 101.133:3964/DRAFT;

100 1 a| Litz, Mark.?| UNAUTHORIZED;

245 10 a| Isotope generated electron density in silicon carbide direct energy converters /c| by Marc Litz and Kara Blaine.;

250 a| [Draft].;

260 a| Adelphi, MD :b| Army Research Laboratory,c| [2006];

300 a| 1 online resource (iv, 16 pages) :b| illustrations.;

336 a| text2| rdacontent;

337 a| computer2| rdamedia;

338 a| online resource2| rdacarrier;

490 1 a| ARL-TR ;v| 3964;

500 a| Title from PDF title screen (ARL, viewed Nov. 24, 2010).;

500 a| "October 2006.";

500 a| The original document contains color images.;

504 a| Includes bibliographical references.;

506 a| APPROVED FOR PUBLIC RELEASE.;

513 a| Draft.b| May 2006.;

520 a| SiC has been investigated for use as a direct energy converter (DEC) for nuclear batteries. A solid-state model is being developed to calculate the electrical output of a diode into a resistively loaded circuit. This paper describes the use of a nuclear scattering code (MCNPX) to calculate the increased electron density that would be expected in a SiC material based on exposure to a Sr90 beta emitter. An incident beta (average 125 keV) generates on the order of 27k free electrons/cc per incident Sr90 electron. For each incident electron, and average of 9 keV is deposited in the SiC. The results of this effort will be fed into the Schottky device numerical model to calculate the predicted power from the device.;

650 0 a| Isotopic power generators.=| ^A842614;

650 0 a| Nuclear batteriesx| Researchz| United States.=| ^A1036820;

650 0 a| Silicon carbidex| Researchz| United States.=| ^A438451;

650 17 a| Isotopes.2| scgdst;

650 27 a| Electricity and Magnetism.2| scgdst;

650 17 a| Electron density.2| dtict;

650 17 a| Isotopes.2| dtict;

650 17 a| Silicon carbides.2| dtict;

650 17 a| Nuclear scattering.2| dtict;

650 17 a| Solid state electronics.2| dtict;

650 27 a| Simulation.2| dtict;

650 27 a| Circuits.2| dtict;

650 27 a| Strontium.2| dtict;

650 27 a| Schottky barrier devices.2| dtict;

650 27 a| Coding.2| dtict;

650 27 a| Models.2| dtict;

653 2 a| DEC(DIRECT ENERGY CONVERTER);

700 1 a| Blaine, Kara.=| ^A1033256;

710 2 a| U.S. Army Research Laboratory.=| ^A367731;

830 0 a| ARL-TR (Aberdeen Proving Ground, Md.) ;v| 3964.=| ^A566074;

856 40 u| http://purl.fdlp.gov/GPO/gpo1957;

949 a| Click on web addressw| ASISh| JOYNER94;

596 a| 1;

998 a| 2406241;

999 a| CLICK ON WEB ADDRESSw| ASISc| 1i| 2406241-1001l| JNETm| JOYNERr| Ys| Yt| JNE1DOu| 2/24/2011x| EDOCUMENTz| JERESOURCE;

Isotope generated electron density in silicon carbide direct energy converters / by Marc Litz and Kara Blaine.

Author/creator	Litz, Mark
Other author	Blaine, Kara.
Other author	U.S. Army Research Laboratory.
Format	Electronic
Edition	[Draft].
Publication Info	Adelphi, MD : Army Research Laboratory, [2006]
Description	1 online resource (iv, 16 pages) : illustrations.
Supplemental Content	http://purl.fdlp.gov/GPO/gpo1957
Subjects	Isotopic power generators. Nuclear batteries--Research. --United States. Silicon carbide--Research. --United States.

Series	ARL-TR ; 3964 ARL-TR (Aberdeen Proving Ground, Md.) ; 3964. ^A566074
Abstract	SiC has been investigated for use as a direct energy converter (DEC) for nuclear batteries. A solid-state model is being developed to calculate the electrical output of a diode into a resistively loaded circuit. This paper describes the use of a nuclear scattering code (MCNPX) to calculate the increased electron density that would be expected in a SiC material based on exposure to a Sr90 beta emitter. An incident beta (average 125 keV) generates on the order of 27k free electrons/cc per incident Sr90 electron. For each incident electron, and average of 9 keV is deposited in the SiC. The results of this effort will be fed into the Schottky device numerical model to calculate the predicted power from the device.
General note	Title from PDF title screen (ARL, viewed Nov. 24, 2010).
General note	"October 2006."
General note	The original document contains color images.
Bibliography note	Includes bibliographical references.
Access restriction	APPROVED FOR PUBLIC RELEASE.
Report note	Draft. May 2006.
GPO item number	0324-A-01 (online)
Govt. docs number	D 101.133:3964/DRAFT

Availability

Library	Location	Call Number	Status	Item Actions
	Electronic Resources	Access Content Online	✔ Available

Isotope generated electron density in silicon carbide direct energy converters / by Marc Litz and Kara Blaine.

Click here for more information about this title

Availability