Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C / Janis M. Niedra, Gene E. Schwarze ; prepared for the Third International Energy Conversion Engineering Conference sponsored by the American Institute of Aeronautics and Astronautics, San Francisco, California, August 15-18, 2005.

Author/creator Niedra, Janis M.
Other author Schwarze, Gene E.
Other author NASA Glenn Research Center.
Other author International Energy Conversion Engineering Conference 2005 : San Francisco, Calif.)
Format Electronic
Publication InfoCleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, [2005]
Description1 online resource (9 p.) : ill.
Supplemental Contenthttps://purl.fdlp.gov/GPO/gpo2661

SeriesNASA/TM- ; 2005-213996
NASA technical memorandum 213996. ^A467613
General noteTitle from title screen (viewed on Jan. 3, 2011).
General note"December 2005."
General note"AIAA-2005-5718."
General noteGPO Cataloging Record Distribution Program (CRDP).
Bibliography noteIncludes bibliographical references (p. 9)
Funding informationWBS-22-612-50-81-12
GPO item number0830-D (online)
Govt. docs number NAS 1.15:2005-213996

Availability

Library Location Call Number Status Item Actions
Electronic Resources Access Content Online ✔ Available