Transmission electron microscopy in micro-nanoelectronics / edited by Alain Claverie.
| Other author | Claverie, A. (Alain) |
| Format | Electronic |
| Publication Info | London : ISTE ; Hoboken, NJ : Wiley, 2013. |
| Description | xiii, 243 pages : illustrations ; 25 cm. |
| Supplemental Content | Full text available from Ebook Central - Academic Complete |
| Subjects |
| Series | Nanoscience and nanotechnology series RSC Nanoscience & nanotechnology. ^A692158 |
| Contents | Active dopant profiling in the TEM by off-axis electron holography / David Cooper -- Dopant distribution quantitative analysis using STEM-EELS/EDX spectroscopy techniques / Roland Pantel, Germain Servanton -- Quantitative strain measurement in advanced devices: a comparison between convergent beam electron diffraction and nanobeam diffraction / Laurent Clement, Dominique Delille -- Dark-field electron holography for strain mapping / Martin Hytch [and others] -- Magnetic mapping using electron holography / Etienne Snoeck, Christophe Gatel -- Interdiffusion and chemical reaction at interfaces by TEM/EELS / Sylvie Schamm-Chardon -- Characterization of process-induced defects / Nikolay Cherkashin, Alain Claverie -- In situ characterization methods in transmission electron microscopy / Aurelien Massebouef -- Specimen preparation for semiconductor analysis / David Cooper, Gerard Ben Assayag. |
| Bibliography note | Includes bibliographical references and index. |
| Access restriction | Available only to authorized users. |
| Technical details | Mode of access: World Wide Web |
| Genre/form | Electronic books. |
| LCCN | 2012952185 |
| ISBN | 9781848213678 |
| ISBN | 1848213670 |