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003 OCoLC;

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049 a| ERE#;

050 4 a| TL521.3b| .T3 no.2000- 209648;

074 a| 0830-D (online);

086 0 a| NAS 1.15:209648;

100 1 a| Schnabel, C. M.,e| author.?| UNAUTHORIZED;

245 10 a| Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes /c| C.M. Schnabel [and six others].;

246 3 a| Correlation of electron-beam-induced current and synchrotron white-beam X-ray topography imaged defects and epilayer growth pits in 6H-SiC Schottky diodes;

264 1 a| Cleveland, Ohio :b| National Aeronautics and Space Administration, Glenn Research Center,c| February 2000.;

300 a| 1 online resource (4 pages) :b| illustrations.;

336 a| textb| txt2| rdacontent;

337 a| computerb| c2| rdamedia;

338 a| online resourceb| cr2| rdacarrier;

490 1 a| NASA/TM ;v| 2000-209648;

500 a| "February 2000.";

500 a| "Prepared for the 1999 International Conference on Silicon Carbide and Related Materials sponsored by North Carolina State University, Raleigh, North Carolina, October 10-15, 1999.";

500 a| "Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field"--Report documentation page.;

500 a| GPO Cataloging Record Distribution Program (CRDP).;

504 a| Includes bibliographical references (page 4).;

513 a| Technical memorandum.;

536 a| Sponsored by the National Aeronautics and Space Administrationd| WU-505-23-2Q-00d| E-11996;

588 a| Description based on online resource; title from PDF title page (NASA, viewed Oct. 25, 2017).;

650 7 a| Correlation.2| nasat;

650 7 a| Synchrotrons.2| nasat;

650 7 a| Topography.2| nasat;

650 7 a| Beam currents.2| nasat;

650 7 a| Electron beams.2| nasat;

650 7 a| Schottky diodes.2| nasat;

650 7 a| Crystal defects.2| nasat;

710 2 a| NASA Glenn Research Center,e| issuing body.=| ^A420740;

776 08 i| Print version:t| Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodesw| (OCoLC)45475689;

776 08 i| Microfiche version:t| Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodesw| (OCoLC)44555025;

830 0 a| NASA technical memorandumv| 2000-209648.=| ^A467613;

856 40 u| https://purl.fdlp.gov/GPO/gpo85917;

949 a| Click on web addressw| asish| joyner94;

596 a| 1;

998 a| 4789916;

999 a| CLICK ON WEB ADDRESSw| ASISc| 1i| 4789916-1001l| JNETm| JOYNERr| Ys| Yt| JNE1DOu| 11/21/2017x| EDOCUMENTz| JERESOURCE;

Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes / C.M. Schnabel [and six others].

Author/creator	Schnabel, C. M. author.
Other author	NASA Glenn Research Center, issuing body.
Format	Electronic
Publication	Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, February 2000.
Description	1 online resource (4 pages) : illustrations.
Supplemental Content	https://purl.fdlp.gov/GPO/gpo85917

Variant title	Correlation of electron-beam-induced current and synchrotron white-beam X-ray topography imaged defects and epilayer growth pits in 6H-SiC Schottky diodes
Series	NASA/TM ; 2000-209648 NASA technical memorandum 2000-209648. ^A467613
General note	"February 2000."
General note	"Prepared for the 1999 International Conference on Silicon Carbide and Related Materials sponsored by North Carolina State University, Raleigh, North Carolina, October 10-15, 1999."
General note	"Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field"--Report documentation page.
General note	GPO Cataloging Record Distribution Program (CRDP).
Bibliography note	Includes bibliographical references (page 4).
Report note	Technical memorandum.
Funding information	Sponsored by the National Aeronautics and Space Administration WU-505-23-2Q-00 E-11996
Source of description	Description based on online resource; title from PDF title page (NASA, viewed Oct. 25, 2017).
Issued in other form	Print version: Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes
Issued in other form	Microfiche version: Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes
GPO item number	0830-D (online)
Govt. docs number	NAS 1.15:209648

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Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes / C.M. Schnabel [and six others].

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