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001 on1056245130;

003 OCoLC;

005 20181010142542.0;

006 m o d f ;

007 cr cn|||||||||;

008 181010s2018 coua ob f000 0 eng d;

035 a| (Sirsi) o1056245130;

049 a| ERE#;

074 a| 0430-P-04 (online);

086 0 a| E 9.17:NREL/CP-5000-71331;

100 1 a| Kozak, Joseph P.,e| author.?| UNAUTHORIZED;

245 10 a| Impact of accelerated stress-tests on SIC MOSFET precursor parameters /c| Joseph P. Kozak [and three others].;

246 3 a| Impact of accelerated stress tests on silicon carbide metal oxide semiconductor field effect transistors precursor parameters;

264 1 a| [Golden, Colo.] :b| National Renewable Energy Laboratory,c| 2018.;

300 a| 1 online resource (5 pages) :b| color illustrations.;

336 a| textb| txt2| rdacontent;

337 a| computerb| c2| rdamedia;

338 a| online resourceb| cr2| rdacarrier;

490 1 a| Conference paper ;v| NREL/CP-5000-71331;

500 a| "Preprint.";

500 a| "Presented at International Symposium on 3D Power Electronics Integration and Manufacturing (3D PEIM), College Park, Maryland, June 25 - 27, 2018.";

500 a| "August 2018.";

500 a| CRDP Program record.;

504 a| Includes bibliographical references (page 5).;

536 b| DE-AC36-08GO28308;

588 a| Description based on online resource; title from PDF title page (NREL, viewed Oct. 10, 2018).;

650 0 a| Metal oxide semiconductor field-effect transistorsx| Testing.=| ^A256237;

650 0 a| Silicon carbide.=| ^A438451;

710 2 a| National Renewable Energy Laboratory (U.S.)e| issuing body.=| ^A367790;

830 0 a| Conference paper (National Renewable Energy Laboratory (U.S.)) ;v| NREL/CP-5000-71331.=| ^A755847;

856 40 u| https://purl.fdlp.gov/GPO/gpo109815;

949 a| Click on web addressw| asish| joyner94;

596 a| 1;

998 a| 4938749;

999 a| CLICK ON WEB ADDRESSw| ASISc| 1i| 4938749-1001l| JNETm| JOYNERr| Ys| Yt| JNE1DOu| 11/13/2018x| EDOCUMENTz| JERESOURCE;

Impact of accelerated stress-tests on SIC MOSFET precursor parameters / Joseph P. Kozak [and three others].

Author/creator	Kozak, Joseph P. author.
Other author	National Renewable Energy Laboratory (U.S.) issuing body.
Format	Electronic
Publication	[Golden, Colo.] : National Renewable Energy Laboratory, 2018.
Description	1 online resource (5 pages) : color illustrations.
Supplemental Content	https://purl.fdlp.gov/GPO/gpo109815
Subjects	Metal oxide semiconductor field-effect transistors--Testing. Silicon carbide.

Variant title	Impact of accelerated stress tests on silicon carbide metal oxide semiconductor field effect transistors precursor parameters
Series	Conference paper ; NREL/CP-5000-71331 Conference paper (National Renewable Energy Laboratory (U.S.)) ; NREL/CP-5000-71331. ^A755847
General note	"Preprint."
General note	"Presented at International Symposium on 3D Power Electronics Integration and Manufacturing (3D PEIM), College Park, Maryland, June 25 - 27, 2018."
General note	"August 2018."
General note	CRDP Program record.
Bibliography note	Includes bibliographical references (page 5).
Funding information	DE-AC36-08GO28308
Source of description	Description based on online resource; title from PDF title page (NREL, viewed Oct. 10, 2018).
GPO item number	0430-P-04 (online)
Govt. docs number	E 9.17:NREL/CP-5000-71331

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Impact of accelerated stress-tests on SIC MOSFET precursor parameters / Joseph P. Kozak [and three others].

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