Leakage Current and Defect Characterization of Short Channel MOSFETs
| Author/creator | Roll, Guntrade Author |
| Format | Electronic |
| Publication Info | Berlin : Logos Verlag Berlin Bristol : ISD [Distributor] |
| Description | 235 p. 08.270 x 05.710 in. |
| Supplemental Content | Full text available from Ebook Central - Academic Complete |
| Series | Research at NaMLab Ser. 2 |
| Summary | Annotation The continuous improvement in semiconductor technology requires field effect transistor scaling while maintaining acceptable leakage currents. This study analyzes the effect of scaling on the leakage current and defect distribution in peripheral DRAM transistors. The influence of important process changes, such as the high-k gate patterning and encapsulation as well as carbon co-implants in the source/drain junction are investigated by advanced electrical measurements and TCAD simulation. A complete model for the trap assisted leakage currents in the silicon bulk of the transistors is presented. |
| Access restriction | Available only to authorized users. |
| Technical details | Mode of access: World Wide Web |
| Genre/form | Electronic books. |
| ISBN | 9783832532611 |
| ISBN | 3832532617 (Trade Paper) Active Record |
| Standard identifier# | 9783832532611 |
| Stock number | 01426427 |
Availability
| Library | Location | Call Number | Status | Item Actions |
|---|---|---|---|---|
| Electronic Resources | Access Content Online | ✔ Available |