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LEADER 01124cam 22003491 4500

001 ocm02648590;

003 OCoLC;

005 20141212103924.0;

008 740605s1967 nyua b 000 0 eng ;

010 a| 67024443;

019 a| 1867047;

035 a| (Sirsi) o02648590;

035 a| (OCoLC)2648590;

049 a| EREE;

050 00 a| TK7871.95b| .R5;

082 0 a| 621.381/528;

100 1 a| Richman, Paul.=| ^A332366;

245 10 a| Characteristics and operation of MOS field-effect devices.;

260 a| New York :b| McGraw-Hill,c| [1967];

300 a| x, 150 pages :b| illustrations ;c| 23 cm;

336 a| text2| rdacontent;

337 a| unmediated2| rdamedia;

338 a| volume2| rdacarrier;

504 a| Includes bibliographies.;

650 0 a| Field-effect transistors.=| ^A86561;

650 0 a| Metal oxide semiconductors.=| ^A65091;

650 4 a| Field-effect transistors.;

910 a| rcp2856;

596 a| 1;

998 a| 503709;

999 a| TK7871.95 .R5w| LCc| 1i| 30372007273185d| 4/3/2013e| 10/19/1999f| 4/3/2013g| 3l| JGESm| JOYNERn| 1r| Ys| Yt| JGESBKu| 9/27/1994x| BOOKz| JSTACKSo| .STAFF. 0;

Characteristics and operation of MOS field-effect devices.

Author/creator	Richman, Paul
Format	Book
Publication Info	New York : McGraw-Hill, [1967]
Description	x, 150 pages : illustrations ; 23 cm
Subjects	Field-effect transistors. Metal oxide semiconductors. Field-effect transistors.

Bibliography note	Includes bibliographies.
LCCN	67024443

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Library	Location	Call Number	Status	Item Actions
Joyner	General Stacks	TK7871.95 .R5	✔ Available	Place Hold

Characteristics and operation of MOS field-effect devices.

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