Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes / C.M. Schnabel [and others].
| Other author | Schnabel, C. M. |
| Other author | NASA Glenn Research Center. |
| Format | Microform |
| Publication Info | [Cleveland, Ohio] : National Aeronautics and Space Administration, Glenn Research Center ; [Springfield, Va.] : [National Technical Information Service, distributor], [2000] |
| Description | 1 volume. |
| Series | NASA technical memorandum ; NASA/TM-2000-209648 NASA technical memorandum ; 209648. ^A467613 |
| General note | Shipping list no.: 2000-0603-M. |
| General note | CRDP Program record. |
| Reproduction note | Microfiche. [Washington, D.C. : National Aeronautics and Space Administration, 2000]. 1 microfiche. |
| Issued in other form | Print version: Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes |
| Issued in other form | Online version: Schnabel, C. M. Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes |
| GPO item number | 0830-D (MF) |
| Govt. docs number | NAS 1.15:209648 |
| Stock number | 20000023159 NASA |