Tools

LEADER 01720cam 22003974a 4500

001 ocm44174231;

003 OCoLC;

005 20141212150235.0;

008 000523s2001 nyua b 000 0 eng ;

010 a| 00042262;

020 a| 0471358274 (cloth : alk. paper);

035 a| (Sirsi) o44174231;

035 a| (OCoLC)44174231;

042 a| pcc;

049 a| EREE;

050 00 a| QC611b| .P78 2001;

082 00 a| 537.6/2262| 21;

245 00 a| Properties of advanced semiconductor materials :b| GaN, AlN, InN, BN, SiC, SiGe /c| edited by Michael E. Levinshtein, Sergey L. Rumyantsev, Michael S. Shur.;

260 a| New York :b| Wiley,c| 2001.;

300 a| xvii, 194 pages :b| illustrations ;c| 25 cm;

336 a| text2| rdacontent;

337 a| unmediated2| rdamedia;

338 a| volume2| rdacarrier;

504 a| Includes bibliographical references.;

505 0 a| Gallium nitride (GaN) / V. Bougrov ... [et al.] -- Aluminum nitride (AIN) / Yu. Goldberg -- Indium nitride (InN) / A. Zubrilov -- Boron nitride (BN) / S. Rumyantsev ... [et al.] -- Silicon carbide (SiC) / Yu. Goldberg, M. Levinshtein, and S. Rumyantsev -- Silicon-germanium (Si[subscript 1-x]Ge[subscript x]) / F. Schäffler.;

650 0 a| Semiconductorsx| Materials.=| ^A1018792;

700 1 a| Levinshteĭn, M. E.q| (Mikhail Efimovich)=| ^A473128;

700 1 a| Rumyantsev, Sergey L.=| ^A473129;

700 1 a| Shur, Michael.=| ^A266166;

994 a| X0b| ERE;

910 a| PromptCat;

980 a| 2001-04-04b| 74.95d| 3.78e| 62.96f| 801833;

596 a| 1;

998 a| 793731;

999 a| QC611 .P78 2001w| LCc| 1i| 30372011103048d| 11/1/2002e| 9/20/2002l| JGESm| JOYNERn| 2p| $62.96r| Ys| Yt| JGESBKu| 4/12/2001x| BOOKz| JSTACKSo| .STAFF. 0;

Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe / edited by Michael E. Levinshtein, Sergey L. Rumyantsev, Michael S. Shur.

Other author	Levinshteĭn, M. E. (Mikhail Efimovich)
Other author	Rumyantsev, Sergey L.
Other author	Shur, Michael.
Format	Book
Publication Info	New York : Wiley, 2001.
Description	xvii, 194 pages : illustrations ; 25 cm
Subjects	Semiconductors--Materials.

Contents	Gallium nitride (GaN) / V. Bougrov ... [et al.] -- Aluminum nitride (AIN) / Yu. Goldberg -- Indium nitride (InN) / A. Zubrilov -- Boron nitride (BN) / S. Rumyantsev ... [et al.] -- Silicon carbide (SiC) / Yu. Goldberg, M. Levinshtein, and S. Rumyantsev -- Silicon-germanium (Si[subscript 1-x]Ge[subscript x]) / F. Schäffler.
Bibliography note	Includes bibliographical references.
LCCN	00042262
ISBN	0471358274 (cloth : alk. paper)

Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe / edited by Michael E. Levinshtein, Sergey L. Rumyantsev, Michael S. Shur.

Click here for more information about this title