Improved infrared response technique for detecting defects and impurities in germanium and silicon p-i-n diodes / A.H. Sher ; sponsored by U.S. Atomic Energy Commission.
| Author/creator | Sher, Alvin H. |
| Other author | U.S. Atomic Energy Commission. |
| Format | Book |
| Publication Info | Washington : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off, 1975. |
| Description | iv, 20 pages : illustrations ; 26 cm. |
| Subjects |
| Series | Semiconductor measurement technology National Bureau of Standards special publication ; 400-13 Semiconductor measurement technology. ^A428054 NBS special publication 400-13. ^A2701 |
| Bibliography note | Includes bibliographical references. |
| LCCN | 75001210 |
| Govt. docs number | C 13.10:400-13 |
Availability
| Library | Location | Call Number | Status | Item Actions |
|---|---|---|---|---|
| Joyner | Fed Docs Stacks | C 13.10:400-13 | ✔ Available | Place Hold |