The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon / W.R. Thurber [and others].

Other author Thurber, W. Robert.
Format Book
Publication InfoWashington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. G.P.O., [1981]
Descriptionv, 47 pages ; 26 cm.
Subjects

SeriesNBS special publication ; 400-64
Semiconductor measurement technology
Semiconductor measurement technology. ^A428054
NBS special publication 400-64. ^A2701
General note"Issued May 1981."
Bibliography noteIncludes bibliographical references.
LCCN 81600052
Govt. docs number C 13.10:400-64

Availability

Library Location Call Number Status Item Actions
Joyner Fed Docs Stacks C 13.10:400-64 ✔ Available Place Hold