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Cover image for Modeling metallic precipitate dissolution in silicon under point defect injection

Modeling metallic precipitate dissolution in silicon under point defect injection

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Cover image for Improved infrared response technique for detecting defects and impurities in germanium and silicon p-i-n diodes

Improved infrared response technique for detecting defects and impurities in germanium and silicon p-i-n diodes

Location Call # Status
Joyner - Fed Docs Stacks C 13.10:400-13 ✔ Available
Cover image for Planar test structures for characterizing impurities in silicon

Planar test structures for characterizing impurities in silicon

  • 1976
  • Format: Book
Location Call # Status
Joyner - Fed Docs Stacks C 13.10:400-21 ✔ Available
Cover image for Precipitate dissolution and gettering under vacancy injection in silicon : final subcontract report 21 March 2006 - 15 January 2008

Precipitate dissolution and gettering under vacancy injection in silicon : final subcontract report 21 March 2006 - 15 January 2008

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Cover image for Electrical impact of SiC structural crystal defects on high electric field devices

Electrical impact of SiC structural crystal defects on high electric field devices

Location Call # Status
Joyner - Microforms B300 NAS 1.15:209647 ✔ Available
Cover image for The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon

The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon

Location Call # Status
Joyner - Fed Docs Stacks C13.10:400-47 ✔ Available
Cover image for Electrical impact of SiC structural crystal defects on high electric field devices

Electrical impact of SiC structural crystal defects on high electric field devices

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Cover image for The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon

The Relationship between resistivity and dopant density for phosphorus- and boron-doped silicon

  • 1981
  • Format: Book
Location Call # Status
Joyner - Fed Docs Stacks C 13.10:400-64 ✔ Available
Cover image for Neutron transmutation doping in semiconductors

Neutron transmutation doping in semiconductors

Location Call # Status
Joyner - General Stacks QC611.6.D6 I57 1978 ✔ Available
Cover image for Understanding light-induced degradation of c-Si solar cells

Understanding light-induced degradation of c-Si solar cells

  • 2012
  • Format: Electronic
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